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| inchange semiconductor isc product specification isc silicon pnp power transistor BDW52/a/b/c description collector current -i c = - 15a collector-emitter sustaining voltage- : v ceo(sus) = -45v(min)- BDW52; -60v(min)- BDW52a -80v(min)- BDW52b; -100v(min)- BDW52c complement to type bdw51/a/b/c applications designed for use in power linear and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit BDW52 -45 BDW52a -60 BDW52b -80 v cbo collector-base voltage BDW52c -100 v BDW52 -45 BDW52a -60 BDW52b -80 v ceo collector-emitter voltage BDW52c -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -15 a i cm collector current-peak -20 a i b b base current -7 a p c collector power dissipation @ t c =25 125 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor BDW52/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BDW52 -45 BDW52a -60 BDW52b -80 v ceo(sus) collector-emitter sustaining voltage BDW52c i c = -100ma; i b = 0 -100 v v ce(sat)-1 collector-emitter saturation voltage i c = -5a; i b = -0.5a b -1.0 v v ce(sat)-2 collector-emitter saturation voltage i c = -10a; i b = -2.5a -3.0 v v be(sat) base-emitter saturation voltage i c = -10a; i b =- 2.5a -2.5 v v be( on ) base-emitter on voltage i c = -5a; v ce = -4v -1.5 v BDW52 v cb = -45v; i e = 0 v cb = -45v; i e = 0; t c = 150 -0.5 -5.0 BDW52a v cb = -60v; i e = 0 v cb = -60v; i e = 0; t c = 150 -0.5 -5.0 BDW52b v cb = -80v; i e = 0 v cb = -80v; i e = 0; t c = 150 -0.5 -5.0 i cbo collector cutoff current BDW52c v cb = -100v; i e = 0 v cb = -100v; i e = 0; t c = 150 -0.5 -5.0 ma BDW52 v ce = -22v; i b = 0 b BDW52a v ce = -30v; i b = 0 b BDW52b v ce = -40v; i b = 0 b i ceo collector cutoff current BDW52c v ce = -50v; i b = 0 b -1.0 ma i ebo emitter cutoff current v eb = -5v; i c =0 -2.0 ma h fe-1 dc current gain i c = -5a; v ce = -4v 20 150 h fe-2 dc current gain i c = -10a; v ce = -4v 5 f t current gain-bandwidth product i c = -0.5a; v ce = -4v 3 mhz isc website www.iscsemi.cn 2 |
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